SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME

摘要

PURPOSE: A semiconductor memory device and a driving method thereof are prevent to reduce parasitic capacitance of a sub bit line, thereby amplifying potential variations due to the charge of a capacitive device without an error. CONSTITUTION: A drain of a first selection transistor(STr1) is connected to a bit line(MBL). A source of the first selection transistor and a first terminal of an amplification circuit(AMP) are connected to a sub bit line(SBL). A second terminal of the amplification circuit is connected to the source of a second selection transistor. A drain of the second selection transistor(STr2) is connected to the bit line. Each memory cell includes the transistor and a capacitive element.