| 摘要 |
<p>Provided is a thin-film transistor comprising a low-temperature polysilicon transistor having a low off-current, excellent potential-holding characteristics, low power usage, and a high operating speed. Also provided are a liquid-crystal display device using said thin-film transistor and a method for manufacturing the thin-film transistor. The provided thin-film transistor uses an inversely staggered structure with a gate electrode, a gate insulation film, a channel region, and source/drain electrodes formed on top of a glass substrate. The channel region comprises a polysilicon film and an a-Si:H film that covers the top and sides of the polysilicon film.</p> |
