| 摘要 |
<P>PROBLEM TO BE SOLVED: To satisfy both suppression of generation of Grow-in failures and improvement of a gettering effect using BMD when a gate insulating film is formed at a temperature of 1000°C or more. <P>SOLUTION: An element isolation region 3 is formed on a semiconductor substrate having an oxygen concentration of 5×10<SP POS="POST">17</SP>atoms/cm<SP POS="POST">3</SP>or less in an initial state. A gate insulating film 5a is formed by thermal oxidation at a temperature of 1000°C or more. Thereafter, ion implantation of oxygen and heat treatment are performed to form a BMD layer 30 below a bottom surface of the element isolation region 3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
