| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing composition which can be used suitably in polishing for forming the interconnections of a semiconductor device, and to provide a polishing method using it. <P>SOLUTION: The polishing composition contains a protective film formation agent which is a compound represented by the following chemical formula (1). In the chemical formula (1), R<SB POS="POST">1</SB>is a hydroxyl group or an amino group, and R<SB POS="POST">2</SB>to R<SB POS="POST">6</SB>are a hydrogen atom, a hydroxyl group, an amino group, an amido group, a nitro group, a methoxy group, an ethoxy group, a halogen group, an alkyl group of 1 to 4C, or a functional group represented by the following chemical formula (2) or (3), independently. <P>COPYRIGHT: (C)2012,JPO&INPIT |
