| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound for an organic thin film transistor, having oxidation stability and solubility applicable to a coating process. <P>SOLUTION: The compound for an organic thin film transistor is represented by formula (1) (wherein R<SP POS="POST">1</SP>-R<SP POS="POST">12</SP>are each a hydrogen atom, a halogen atom, 1C-30C alkyl, 2C-30C alkenyl, 2C-30C alkynyl, 1C-30C haloalkyl, 1C-30C alkoxy, 1C-30C haloalkoxy, 1C-30C thioalkyl, 1C-30C haloalkylthio, 1C-30C alkylamino, 2C-60C dialkylamino (alkyls may be mutually bound to form a nitrogen-containing ring structure), ring-forming 6C-30C arylamino, 1C-30C alkylsulfonyl, 1C-30C haloalkylsulfonyl, a ring-forming 6C-60C aromatic hydrocarbon group, a ring-forming 5C-60C aromatic heterocyclic group, 3C-20C alkylsilyl, 5C-60C alkylsilylethynyl or cyano and these groups each may contain a substituent, with proviso that a case in which all of R<SP POS="POST">1</SP>-R<SP POS="POST">12</SP>are hydrogen atoms is omitted). <P>COPYRIGHT: (C)2012,JPO&INPIT |
