| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing agent capable of improving particle removal performance in cleaning after polishing and reducing polishing scratches, and a method for polishing a substrate using the polishing agent. <P>SOLUTION: A CMP polishing agent for removing an excess silicon oxide film contains cerium oxide particles, a water-soluble polymer, a complex forming agent with cerium selected from β-diketone, and water, and has a concentration of the complex forming agent with cerium of 0.1 wt.% or more and 10.0 wt.% or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
