| 发明名称 |
Graphene oxide memory devices and method of fabricating the same |
| 摘要 |
A graphene oxide memory device includes a substrate, a lower electrode disposed on the substrate, an electron channel layer disposed on the lower electrode by using a graphene oxide, and an upper electrode disposed on the electron channel layer.
|
| 申请公布号 |
US2012080656(A1) |
申请公布日期 |
2012.04.05 |
| 申请号 |
US201113200644 |
申请日期 |
2011.09.28 |
| 申请人 |
CHOI SUNG YOOL;KIM JONG YUN;JEONG HU YOUNG;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHOI SUNG YOOL;KIM JONG YUN;JEONG HU YOUNG |
| 分类号 |
H01L45/00;B82Y99/00;H01L21/8239 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
