发明名称 Integrated Shadow Mask/Carrier for Pattern Ion Implantation
摘要 An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns can be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier. In addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier. In some embodiments, gravity is used to hold the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.
申请公布号 US2012083102(A1) 申请公布日期 2012.04.05
申请号 US20100895927 申请日期 2010.10.01
申请人 BATEMAN NICHOLAS;DANIELS KEVIN;GUPTA ATUL;LOW RUSSELL;RIORDON BENJAMIN;MITCHELL ROBERT;ANELLA STEVEN;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 BATEMAN NICHOLAS;DANIELS KEVIN;GUPTA ATUL;LOW RUSSELL;RIORDON BENJAMIN;MITCHELL ROBERT;ANELLA STEVEN
分类号 H01L21/71;H01J37/20 主分类号 H01L21/71
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