RESIST PATTERN FORMING METHOD, AND METHOD FOR PROCESSING BASE PLATE USING SAME

摘要

In resist pattern formation using a chemical-amplification type resist material, resist pattern collapse can be suppressed. Provided is a resist pattern forming method wherein a step of coating a chemical-amplification type resist material (5) on a substrate (1) and steps of exposure and development are performed, so that a resist pattern having a predetermined aspect ratio (AR) of 1.5 or more is formed on a resist film (2) made of the resist material (5), and wherein an adhesion process for increasing the adhesiveness between the substrate (1) and the resist film (2) is controlled so that a residual film (3) of the resist film (2) has a thickness between 1 nm and 1.83 X AR+1.73 nm inclusive.