| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method capable of improving accuracy in detecting a light point defect on a wafer, and classifying the light point defect into a crystal defect or an adhered foreign substance. <P>SOLUTION: In a wafer defect detection method, a surface of a wafer is irradiated with perpendicular irradiation light in a perpendicular direction thereto, and a first size of a light point defect on the irradiated surface is obtained based on detected intensity of scattering light that scatters in a high angle range, in scattering light from the irradiated surface. The surface of the wafer is also irradiated by oblique irradiation light in a direction oblique thereto, and a second size of the light point defect on the irradiated surface is obtained based on detected intensity of scattering light that scatters in a low angle range, in scattering light from the irradiated surface. When classifying the light point defect into a crystal defect and an adhered foreign substance based on a ratio of the first size to the second size and a previously obtained threshold value, wavelength of the perpendicular irradiation light and wavelength of the oblique irradiation light are set to be different. <P>COPYRIGHT: (C)2012,JPO&INPIT |
