发明名称 HIGH IMPEDANCE MICROWAVE ELECTRONICS
摘要 <p>High impedance, high frequency nanoscale device electronics configured to interface with low impedance loads include an impedance transforming stage constructed of multiple nanoscale devices, such as carbon nanotube field-effect transistors. In an embodiment of the present invention, an impedance transforming output stage of a multistage amplifier is configured to drive a 50 ohm transmission line with unity voltage gain using multiple carbon nanotube field-effect transistors in parallel. In a further embodiment, a receiver provided for an electronically steered receive array is a monolithic, lumped-element system formed from nanoscale devices and configured to interface with the external electrical systems via a single transmission line.</p>
申请公布号 WO2012044961(A1) 申请公布日期 2012.04.05
申请号 WO2011US54269 申请日期 2011.09.30
申请人 NORTHROP GRUMMAN SYSTEMS CORPORATION;PESETSKI, AARON, A.;PESETSKI, HONG, Z.;BAUMGARDNER, JAMES, E.;DAWSON, DALE, E. 发明人 PESETSKI, AARON, A.;PESETSKI, HONG, Z.;BAUMGARDNER, JAMES, E.;DAWSON, DALE, E.
分类号 H03F3/04 主分类号 H03F3/04
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