| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique capable of forming an excellent ohmic electrode in an atmosphere other than a non-oxidative atmosphere. <P>SOLUTION: A method of manufacturing a semiconductor device having an ohmic electrode comprises the steps of: forming a metal layer 30e on a semiconductor substrate 50; forming a transmission film 30f on the metal layer 30e; heating the metal layer 30e by irradiating the metal layer 30e with an electromagnetic wave through the transmission film 30f; and removing the transmission film 30f. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012069798(A) |
申请公布日期 |
2012.04.05 |
| 申请号 |
JP20100214245 |
申请日期 |
2010.09.24 |
| 申请人 |
TOYOTA MOTOR CORP;TOYOTA CENTRAL R&D LABS INC;DENSO CORP |
发明人 |
FUJIWARA HIROKAZU;KONISHI MASAKI;MORIMOTO ATSUSHI;KATSUNO TAKASHI;WATANABE YUKIHIKO;SOEJIMA SHIGEMASA;KAWAI JUN;ENDO TAKESHI;YAMAMOTO TAKEO |
| 分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
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