| 摘要 |
<P>PROBLEM TO BE SOLVED: To produce a semiconductor device in which devices are stacked in multistep by a method of time-saving process when compared with prior art. <P>SOLUTION: A plurality of devices 10 each having an electrode 13 exposed to the side surface 12 are stacked on the support surface 21a in a stacked device housing box 20, having inner surfaces 22a, 23a on which connection electrodes 24 corresponding to the electrodes 13 of the devices 10 are formed and a support surface 21a supporting the lower surface of the device 10, while abutting the side surface 12 of the device 10 against the inner surfaces 22a, 23a and connecting the electrode 13 and the connection electrode 24 electrically. The electrodes 13 of the devices 10 are connected automatically via the connection electrodes 24 of the stacked device housing box 20. <P>COPYRIGHT: (C)2012,JPO&INPIT |
