| 摘要 |
The invention provides a graphene film producing method that can produce large-area graphene without requiring high temperature, an electronic element manufacturing method with which a resist FET circuit pattern can easily be formed on an element substrate, and that can be easily applied to an area-increasing process by integrating elements, and a method for transferring a graphene film to a substrate, whereby a large-area graphene film can be isolated, and a graphene film of a desired size can be transferred to a desired position of a substrate. The method is characterized by the step of contacting an amorphous carbon film to a liquid metal such as gallium to form a graphene film at the contact interface. |
