ETCHING FLUID COMPOSITION AND ETCHING METHOD

摘要

A composition is adopted that includes an inorganic acid and a metal compound. The composition further includes an organic acid, an organic acid salt, an inorganic acid salt, or a surfactant. The composition further includes hydrochloric acid, phosphoric acid, sulfuric acid, or nitric acid, as the inorganic acid. Furthermore, an iron-based compound is used as the metal compound. At least one acid selected from a group comprising monocarboxylic acid, polycarboxylic acid, oxycarboxylic acid, phosphonic acid, sulfonic acid and salts thereof is used as the organic acid and the organic acid salt. Using the etching fluid composition according to the present invention, a semiconductor film of AlGaInP film, AlGaAs film or GaAsP film is etched, and the surface is made rough.