| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetoresistive element with a large thermal agitation resistance in which spin injection flux reversal writing is possible with a low current. <P>SOLUTION: The magnetoresistive element includes: an electrode layer having a metal layer containing any one of Mo, Nb, and W; a memory layer 3 which is arranged on the metal layer in contact the metal layer, has an easy axis of magnetization in a direction perpendicular to a film surface and has a variable magnetization direction; a reference layer 2 which is arranged on the memory layer 3, has an easy axis of magnetization in a direction perpendicular to the film surface and has an invariable magnetization direction; and a first nonmagnetic layer 4 provided between the memory layer 3 and the reference layer 2. The magnetization direction of the memory layer 3 can be varied by current penetrating the memory layer 3, the first nonmagnetic layer 4, and the reference layer 2. <P>COPYRIGHT: (C)2012,JPO&INPIT |
