| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a contact resistance of a GaN-based semiconductor element that is crystal-grown on a substrate whose surface is inclined at an angle ranging from 1° or more to 5° or less with respect to the m-plane. <P>SOLUTION: A nitride-based semiconductor element comprises a semiconductor laminated structure 20 having a p-type semiconductor region in which a surface 12 is inclined at an angle ranging from 1° or more to 5° or less with respect to the m-plane, and an electrode 30 formed on the p-type semiconductor region. The p-type semiconductor region is formed with an Al<SB POS="POST">x</SB>In<SB POS="POST">y</SB>Ga<SB POS="POST">z</SB>N (x+y+z=1, x≥0, y≥0, and z≥0) layer 26. The electrode 30 includes a Zn layer 32, and the Zn layer 32 contacts with a surface of the p-type semiconductor region of the semiconductor laminated structure 20. <P>COPYRIGHT: (C)2012,JPO&INPIT |
