| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the mass productivity of an insulating oxide, to impart stabilized electrical properties to a semiconductor device using such insulating oxide, and to produce a high-reliability semiconductor device. <P>SOLUTION: A film is formed on a substrate by using a target prepared by adding to gallium oxide a material, such as zinc, which is more evaporable than gallium when heated at 400-700°C according to a high-productivity sputtering method, such as DC sputtering or pulse DC sputtering, applicable to a large substrate, and the film is heated at 400-700°C to segregate the added material in the proximity of the surface of the film. Because the other area of the film has a reduced concentration of the added material and exhibits sufficient insulation properties, the resultant film can be utilized as e.g., a gate insulator of a semiconductor device. <P>COPYRIGHT: (C)2012,JPO&INPIT |
