| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce damage caused by etching a surface of an electrode. <P>SOLUTION: A dual-gate type transistor comprises: a first insulation layer provided covering a first conductive layer; a first semiconductor layer provided on the first insulation layer; a second semiconductor layer provided on and separated from the first semiconductor layer so that the first semiconductor layer is exposed; an impurity semiconductor layer provided on the second semiconductor layer; a second conductive layer provided on the impurity semiconductor layer so that at least a part of the second conductive layer is in contact with the impurity semiconductor layer; a second insulation layer provided on the second conductive layer; a third insulation layer provided covering the first semiconductor layer, the second semiconductor layer, the impurity semiconductor layer, the second conductive layer, and the second insulation layer; and a third conductive layer provided on at least the third insulation layer. The first to third insulation layers are provided with an opening portion. The thickness of the first insulation layer and the thickness of the second insulation layer are substantially equal to each other. <P>COPYRIGHT: (C)2012,JPO&INPIT |
