| 摘要 |
A photoelectric conversion device comprises a substrate (20), a surface electrode layer (22) which is formed on the substrate (20), an a-Si unit (202) and a µc-Si unit (204) both of which are formed on the surface electrode layer (22), a back surface electrode layer (26) which is formed on the a-Si unit (202) and the µc-Si unit (204), a filler (28) which covers at least a part of the back surface electrode layer (26), and a back surface protecting material (30) which covers the back surface electrode layer (26) through the filler (28), wherein the back surface electrode layer (26) comprises a first zinc oxide layer (26a), a metal layer (26b) and a second zinc oxide layer (26c) which are laminated in this order when viewed from the side of the a-Si unit (202) and the µc-Si unit (204). |
