THE METHOD FOR FORMING GATE OXIDE FILM USING CONTORL OF HF-OXIDE FILM THICKNESS AND GATE ELECTRODE USING THE SAME
摘要
<p>PURPOSE: A gate oxide film formation method which utilizes a thickness control process of a hafnium oxide film which has high dielectric constant and a gate electrode using the same are provided to reduce the equivalent oxide film thickness of an oxide film by easily eliminating an interfacial layer between a semiconductor substrate and an oxide film. CONSTITUTION: A semiconductor substrate is comprised of an indium-phosphide compound. An oxide film which is comprised of a hafnium oxide material is deposited on the semiconductor substrate. The thickness of the hafnium oxide film is controlled within a range from 5.5nm to 11nm. The interfacial stress between the oxide film and the semiconductor substrate is 0.095 to 0.55 percent.</p>
申请公布号
KR20120032307(A)
申请公布日期
2012.04.05
申请号
KR20100093895
申请日期
2010.09.28
申请人
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
发明人
CHO, MANN HO;KANG, YU SEON;KIM, CHUNG YI;JANG, MOON HYUNG;KO, DAE HONG