| 摘要 |
1326947 Making semi-conductor devices INTEL CORP 14 Aug 1970 [22 Jan 1970] 39335/70 Heading H1K In the manufacture of a semi-conductor device a structure comprising a semi-conductor body bearing an abruptly-contoured insulating layer is treated to smooth the contours prior to the deposition on the contoured area of a further layer forming part of an electrical contact to the semi-conductor surface. The treatment consists in so heating a vitreous film at the contained area that plastic flow may occur to smooth the contours. Thus the insulating layer may be heated in the presence of glass-forming vaporous or deposited dopants, or the insulating layer may have a glass layer deposited thereon, or the layer may itself be vitreous or may itself enter a vitreous state when heated. The use of the method in the manufacture of a silicon IGFET with a polycrystalline silicon gate electrode is described. |
