| 摘要 |
PURPOSE: A method for forming a pattern without fume is provided to omit a separate process for eliminating fume by applying a hydrogen atom or steam which are activated in a post thermal process and eliminating the fume. CONSTITUTION: A pattern is formed by etching a material layer using an etching gas which includes a halogen compound(S21). A substrate, in which the pattern is formed, is transferred from an etching apparatus to a dry cleaning apparatus(S22). The substrate is dried and washed using a HF(Hydrogen) gas, a NH3(Ammonia) gas, and a mixing gas of IPA(Isopropyl Alcohol) in a chamber as a cleaning gas(S23). Fume is removed by applying at least one of a hydrogen atom and steam which are activated in the dry cleaning apparatus.
|
