发明名称 |
BONDING METHOD OF SINGLE CRYSTAL SUPERALLOYS WITH HIGH TEMPERATURE AND PRESSURE PROCESS |
摘要 |
PURPOSE: A junction method for a single crystal super heat resistant alloy using a high-temperature high-pressure process is provided to improve junction characteristics, such as tensile strength and elongation ratio, through high-temperature pressing and post-thermal processing. CONSTITUTION: A junction method for a single crystal super heat resistant alloy using a high-temperature high-pressure process comprises the steps of: preparing a single crystal super heat resistant alloy, adding an insert to the single crystal super heat resistant alloy and implementing junction, and sequentially implementing high-temperature pressing and post-thermal processing. The insert is an amorphous material including a main element used in the single crystal super heat resistant alloy.
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申请公布号 |
KR20120032108(A) |
申请公布日期 |
2012.04.05 |
申请号 |
KR20100093552 |
申请日期 |
2010.09.28 |
申请人 |
KOREA ELECTRIC POWER CORPORATION |
发明人 |
KIM, DOO SOO;LEE, HAN SANG;SONG, KYU SO;HU, NAM HOE;YOO, KEUN BONG |
分类号 |
B23K20/16 |
主分类号 |
B23K20/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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