发明名称 MANUFACTURING METHOD FOR LIGHT-EMITTING DISPLAY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a light-emitting display device without adding a step while simplifying the manufacturing process of a transistor and reducing the number of photomasks. <P>SOLUTION: A step of processing a semiconductor layer into an island shape for each transistor can be omitted by using a substantially intrinsic high-resistance oxide semiconductor for a semiconductor layer included in the transistor. In a step of forming an opening in an insulation layer formed on the semiconductor layer, an unnecessary part of the semiconductor layer is etched at the same time, thereby reducing a photolithography process. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012068629(A) 申请公布日期 2012.04.05
申请号 JP20110184306 申请日期 2011.08.26
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 G09F9/00;G09F9/30;H01L21/336;H01L21/36;H01L27/32;H01L29/786;H01L51/50;H05B33/08;H05B33/12;H05B33/22 主分类号 G09F9/00
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