| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting element capable of minimizing increase in contact resistance between the semi-polar main surface of a gallium nitride based semiconductor layer and a palladium electrode. <P>SOLUTION: The manufacturing method of a semiconductor laser 100 includes a laminate formation step for forming a laminate 20 by arranging an active layer 14 and a p-type semiconductor layer 18 having a semi-polar main surface sequentially on the surface of a semiconductor substrate 10, a surface electrode formation step for forming a substrate product by forming a palladium electrode 38 to be bonded to the semi-polar main surface of the p-type semiconductor layer 18, and a processing step for processing the p-type semiconductor layer 18 and the palladium electrode 38. The p-type semiconductor layer 18 and the palladium electrode 38 are held in a state of temperature T(K) for a time t(min) so that the conditions represented by formula (1) are satisfied. (In the formula, α<SB POS="POST">1</SB>is 16870, α<SB POS="POST">2</SB>is 30.35-30.55). <P>COPYRIGHT: (C)2012,JPO&INPIT |
