| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device wherein an insulating layer patterned well can be formed on the surface of a release layer, and a support can be released easily. <P>SOLUTION: The manufacturing method of a semiconductor device includes a step for forming a first release layer 28 on the surface of a support 27, a step for forming a second release layer 29 having a shear viscoelasticity G' or a viscoelasticity E' at the same temperature as the first release layer higher than that of the first release layer on the surface of the first release layer, a step for forming a wiring layer including a first insulation layer 22 as the lowermost layer on the surface of the second release layer, a step for mounting a semiconductor chip on the surface of the wiring layer, a step for sealing the semiconductor chip with a mold resin 26, and a step for releasing the support from the first insulation layer by heating the first release layer. The first release layer is composed of a thermoplastic resin having a shear viscoelasticity G' or a viscoelasticity E' capable of releasing the support from the first insulation layer at a temperature of releasing the support from the first insulation layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
