| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern formation method capable of accurately forming a fine pattern on a member to be processed. <P>SOLUTION: The pattern formation method by one embodiment includes: a process of forming a hard mask 3 having a first through groove on a first film on a member 1 to be processed; a process of forming photoresist 5 on the first film and the hard mask 3; a process of forming an altered part in the photoresist 5 by making the photoresist 5 and the first film react with each other; a process of removing the part other than the altered part of the photoresist 5 by development processing; a process of forming a second through groove in the hard mask after the development processing; and a process of etching the member to be processed using the hard mask 3 having the first and second through grooves as a mask. <P>COPYRIGHT: (C)2012,JPO&INPIT |
