发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of realizing an earthquake-resistant structure for easy mounting and dismounting, with no interference with a quartz component such as thermo-couple and gas nozzle installed around the lower part of a reaction tube. <P>SOLUTION: The substrate processing apparatus includes a reaction vessel which is tubular, with its lower end opened, and stores a substrate within it for processing, a support part which extends horizontally from the outside of the reaction vessel to the lower end part while maintaining such state as the lower end of the reaction vessel is opened, for supporting the lower end part of the reaction vessel from below, and a fixing device which is secured to the support part for suppressing swinging of the reactive vessel. The reaction vessel includes an inside flange part which is provided on the inside wall at the lower part of the reaction vessel to protrude inward or a penetration opening which is so formed as to penetrate the lower end side wall of the reaction vessel from inside to outside. The fixing device is secured to the lower side of the support part and extends from the lower side of the support part to the side and above the inside flange part, otherwise, secured to the lower side of the support part and extends from the lower side of the support part to the inside wall of the reaction vessel and the inside of the penetration opening. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012069843(A) 申请公布日期 2012.04.05
申请号 JP20100214923 申请日期 2010.09.27
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TATENO HIDETO;ISHII AKINORI
分类号 H01L21/31;C23C16/44;H01L21/22 主分类号 H01L21/31
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