THIN FILM TRANSISTOR, MANUFACTURING METHOD FOR THIN FILM TRANSISTOR, AND LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To stabilize the on current of a thin film transistor.

SOLUTION: A protective insulation film 6d is formed with a thickness (for example, 2000 Å or more and 4000 Å or less) enough to separate a source electrode 6i and a drain electrode 6h from a gate electrode 6a so that a back gate effect is not exhibited between the source electrode 6i and the gate electrode 6a and between the drain electrode 6h and the gate electrode 6a in a driver transistor 6 of an EL panel 1. Thus, the disturbance of a channel of the driver transistor 6 is suppressed, so that the on current can be stabilized.

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