METHOD FOR MANUFACTURING NON-VOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY ELEMENT

摘要

This method for manufacturing a variable resistance non-volatile memory element comprises: a step for forming a first electrode (2) on a substrate (1); a step for forming a first metal oxide layer (31) having a prescribed oxygen content on the first electrode (2); a modification step for forming a modified layer having resistance higher than the first metal oxide layer (31) on at least part of the first metal oxide layer (31) by reducing the degree of oxygen deficiency in a part thereof; a step for forming a second metal oxide layer (32) having an oxygen content lower than the first metal oxide layer (31) on the modified layer; and a step for forming a second electrode (4) on the second metal oxide layer (32). A variable resistance layer is constituted of the first metal oxide layer (31) having the modified layer and the second metal oxide layer (32), and the first electrode (2) and the second electrode (4) are connected. The variable resistance layer transitions between a high resistance state and a low resistance state according to the polarity of electrical pulses applied.