Semiconductor structure e.g. PNP-semiconductor structure, manufacturing method, involves accelerating ions by acceleration voltage, where ions acceleration and plasma generation are independently controlled from each other

摘要

The method involves arranging a surface oxide layer of an emitter layer on an NPN structure, where the emitter layer manufactures a PNP structure and is provided with a vertical upper surface. A removal of the surface oxide layer is enabled by ion etching process, and plasma is generated for providing ions in a vacuum chamber by high frequency coupling, where the ions are accelerated by acceleration voltage between the plasma and a wafer. The ions acceleration and plasma generation are independently controlled from each other, and etch gases are provided from trifluoro-methane.