发明名称 |
Flash Memory for Code and Data Storage |
摘要 |
A flash memory for code and data storage includes a code memory array having fast read access and suitability for execute in place, a data memory array having the characteristics of low bit cost and high density storage, and a suitable interface to provide access to both the code and data. The code memory array may be a NOR array or a performance-enhanced NAND array. The memory may be implemented in a single chip package or multi-chip package solution.
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申请公布号 |
US2012084491(A1) |
申请公布日期 |
2012.04.05 |
申请号 |
US201113250077 |
申请日期 |
2011.09.30 |
申请人 |
PARK EUNGJOON;JIGOUR ROBIN JOHN;PARK JOOWEON;YANO MASARU |
发明人 |
PARK EUNGJOON;JIGOUR ROBIN JOHN;PARK JOOWEON;YANO MASARU |
分类号 |
G06F12/02 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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