发明名称 Flash Memory for Code and Data Storage
摘要 A flash memory for code and data storage includes a code memory array having fast read access and suitability for execute in place, a data memory array having the characteristics of low bit cost and high density storage, and a suitable interface to provide access to both the code and data. The code memory array may be a NOR array or a performance-enhanced NAND array. The memory may be implemented in a single chip package or multi-chip package solution.
申请公布号 US2012084491(A1) 申请公布日期 2012.04.05
申请号 US201113250077 申请日期 2011.09.30
申请人 PARK EUNGJOON;JIGOUR ROBIN JOHN;PARK JOOWEON;YANO MASARU 发明人 PARK EUNGJOON;JIGOUR ROBIN JOHN;PARK JOOWEON;YANO MASARU
分类号 G06F12/02 主分类号 G06F12/02
代理机构 代理人
主权项
地址