发明名称 |
ALKYLSILANE LAMINATE, PRODUCTION METHOD THEREOF AND THIN-FILM TRANSISTOR |
摘要 |
Provided is an alkylsilane laminate with which it is possible to obtain an organic semiconductor film having excellent semiconductor properties. Such a laminate can be useful for an organic thin-film transistor. The alkylsilane laminate comprises an underlayer (Sub) having hydroxyl groups at the surface and an alkylsilane thin film (AS) formed on this underlayer. The alkylsilane laminate is a laminate wherein the critical surface energy Ec of the alkylsilane thin film and the number of carbons (X) of the alkylsilane satisfies the following formula (1): Ec≦̸29.00−0.63x (mN/m) (1) Also provided is a thin-film transistor (10) having such an alkylsilane laminate (Sub, AS).
|
申请公布号 |
US2012080679(A1) |
申请公布日期 |
2012.04.05 |
申请号 |
US201013322830 |
申请日期 |
2010.05.27 |
申请人 |
KUSHIDA TAKASHI;NAITO HIROYOSHI;TEIJIN LIMITED |
发明人 |
KUSHIDA TAKASHI;NAITO HIROYOSHI |
分类号 |
H01L29/786;B05D5/00;B32B9/04 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|