发明名称 |
METHOD OF DAMAGE-FREE IMPURITY DOPING FOR CMOS IMAGE SENSORS |
摘要 |
A method of fabricating a backside-illuminated pixel. The method includes forming frontside components of the pixel on or in a front side of a substrate, the frontside components including a photosensitive region of a first polarity. The method further includes forming a pure dopant region of a second polarity on a back side of the substrate, applying a laser pulse to the backside of the substrate to melt the pure dopant region, and recrystallizing the pure dopant region to form a backside doped layer. Corresponding apparatus embodiments are disclosed and claimed. |
申请公布号 |
US2012080765(A1) |
申请公布日期 |
2012.04.05 |
申请号 |
US20100896518 |
申请日期 |
2010.10.01 |
申请人 |
KU KEH-CHIANG;LIU CHIA-YING;TAI HSIN-CHIH;VENEZIA VINCENT;OMNIVISION TECHNOLOGIES, INC. |
发明人 |
KU KEH-CHIANG;LIU CHIA-YING;TAI HSIN-CHIH;VENEZIA VINCENT |
分类号 |
H01L31/0232;H01L31/18 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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