PATTERN FORMING METHOD, RESIST UNDERLAYER FILM, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM

摘要

The present invention provides a pattern forming method which comprises, in the following order: (1) a resist underlayer film formation step wherein a resist underlayer film is formed on the upper surface of a substrate to be processed by applying a composition for forming a resist underlayer film thereto, said composition containing a resin that has a phenolic hydroxy group; (2) a resist pattern formation step wherein a resist pattern is formed on the upper surface of the resist underlayer film; (3) a pattern formation step wherein at least the resist underlayer film and the substrate to be processed are dry etched using the resist pattern as a mask, so that the substrate to be processed is patterned; and (4) a resist underlayer film removal step wherein the resist underlayer film on the substrate to be processed is removed by means of a basic solution.