SHALLOW JUNCTION SOLAR BATTERY AND MANUFACTURING METHOD THEREOF

摘要

A shallow junction solar battery and its manufacturing method are provided, which belongs to the manufacturing technique of solar battery device. The shallow junction solar battery includes metal grid electrodes(5), a passivation layer(4), a crystal silicon(2), and metal back electrodes(1). The metal back electrodes(1) are on the back surface of the crystal silicon(2), the passivation layer(4) is on the crystal silicon(2), and the metal grid electrodes(5) are on the passivation layer(4). The crystal silicon(2) has a PN junction, whose depth is 10-200nm. The manufacturing method includes: pretreating the crystal silicon(2), forming the PN junction on the crystal silicon(2) by plasma immersion ion implantation process, and passivating the PN junction so as to form the passivation layer(4), and forming the metal back electrodes(1) and the metal grid electrodes(5) on the back surface of the crystal silicon(2) and on the passivation layer(4), respectively. The shallow solar battery can shorten the carrier transport path, so as to increase the photoelectric conversion efficiency, and the method is simple and controllable.