| 摘要 |
The substrate has a support (1) presenting crystalline defect density greater than 10 power 5/cubic cm, where the size of crystalline defects is greater than 10 nm. A continuous insulating layer (2) is placed on a region (4) of a front surface of the support. A superficial layer (3) is positioned on the insulating layer. A supplementary layer (6) is placed on another region (5) of the front surface of the support, where the supplementary layer comprises an exposed surface (15) above the latter region. The supplementary layer has a sufficient thickness for burying the defects of the support. An independent claim is also included for a method for fabricating a semi-conductor structure.
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