| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of improving light extraction efficiency. <P>SOLUTION: A semiconductor light-emitting element comprises: a stacked film including a p-type nitride semiconductor layer, an active layer that is provided on the p-type nitride semiconductor layer and has a multiple quantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer provided on the active layer; an n-electrode connected to the n-type nitride semiconductor layer; a p-electrode connected to the p-type nitride semiconductor layer; and an uneven region formed on a top surface of the n-type nitride semiconductor layer. The uneven region includes a mixture of a first irregularity having a difference in height of 1 to 3 μm and a second irregularity having a difference in height of 300 nm or less that is smaller than the first irregularity. <P>COPYRIGHT: (C)2012,JPO&INPIT |
