| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of suppressing irregular reflection of light when performing a photolithography process. <P>SOLUTION: Processes executed in the manufacturing method of a semiconductor device includes: a process of forming a lower layer wiring configuration film 2a on a substrate 1, patterning the lower layer wiring configuration film 2a and forming lower layer wiring 2; a process of forming an interlayer insulating film 4 covering the lower layer wiring 2 on the substrate 1 and forming a via hole in the interlayer insulating film 4; a process of forming a first upper layer wiring configuration film 7a on the interlayer insulating film 4 by a sputtering method; a process of reflowing the first upper layer wiring configuration film 7a at a temperature higher than the temperature in the process of forming the first upper layer wiring configuration film 7a; a process of forming a second upper layer wiring configuration film 8a on the first upper layer wiring configuration film 7a by a sputtering method at a temperature lower than the temperature in the reflowing process; a process of forming an antireflection film 9 on the second upper layer wiring configuration film 8a; and a process of forming resist on the antireflection film 9. <P>COPYRIGHT: (C)2012,JPO&INPIT |
