发明名称 |
MOS DEVICE WITH VARYING CONTACT TRENCH LENGTHS |
摘要 |
A semiconductor device is formed on a semiconductor substrate. The device comprises a drain; an epitaxial layer overlaying the drain; a body disposed in the epitaxial layer, having a body top surface and a body bottom surface; a source embedded in the body, extending from the body top surface into the body; a first gate trench extending into the epitaxial layer; a first gate disposed in the first gate trench; an active region contact trench extending through the source and at least part of the body into the drain; an active region contact electrode disposed within the active region contact trench; a second gate trench extending into the epitaxial layer; a second gate disposed in the gate trench; a gate contact trench formed within the second gate; and a gate contact electrode disposed within the gate contact trench.
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申请公布号 |
US2012080751(A1) |
申请公布日期 |
2012.04.05 |
申请号 |
US201113316365 |
申请日期 |
2011.12.09 |
申请人 |
BHALLA ANUP;WANG XIAOBIN;PAN JI;WEI SUNG-PO;ALPHA & OMEGA SEMICONDUCTOR LIMITED |
发明人 |
BHALLA ANUP;WANG XIAOBIN;PAN JI;WEI SUNG-PO |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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