ENERGY STORAGE DEVICE WITH LARGE CHARGE SEPARATION
摘要
High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.
申请公布号
WO2012009010(A3)
申请公布日期
2012.04.05
申请号
WO2011US01223
申请日期
2011.07.12
申请人
THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY;HOLME, TIMOTHY, P.;PRINZ, FRIEDRICH, B.;IANCU, ANDREI
发明人
HOLME, TIMOTHY, P.;PRINZ, FRIEDRICH, B.;IANCU, ANDREI