| 摘要 |
A nitride semiconductor device of an embodiment includes: a nitride semiconductor device, including: a nitride semiconductor substrate; a first anode electrode formed on the substrate; a recess structure formed on the substrate of an outer peripheral portion of the first anode electrode by engraving the substrate; a second anode electrode formed so as to cover the first anode electrode and so as to be embedded in the recess structure; and a cathode electrode formed on the substrate. |
