| 摘要 |
A method of manufacturing a semiconductor device is provided to stabilize subsequent processes by controlling the step height of the second insulating layer. The semiconductor substrate(100) is etched to form a pillar type active pattern. The first conductive pattern is formed in the side wall of the pillar type active pattern. The second conductive pattern extending to the first direction is formed within the surface of semiconductor substrate between the pillar type active patterns. The first insulating layer(114) is buried in the space between the pillar type active patterns. The first conductive pattern includes the gate(110). The second conductive pattern includes the bit line(112).
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