发明名称 |
PHOTOLITHOGRAPHY PROCESS FOR SEMICONDUCTOR DEVICE |
摘要 |
Provided is a non-transitory computer readable medium including instructions to generate a level sensor map and create a compensation map from the level sensor map. The level sensor map includes a first determination of a first height above a reference plane of a feature disposed on a semiconductor substrate, and a second determination of a second height above the reference plane of a second feature disposed on a semiconductor substrate. The first and second feature are in a single exposure field. The compensation map includes a determination of at least one parameter to be used during exposure of a single field during an exposure process for the semiconductor substrate.
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申请公布号 |
US2012082940(A1) |
申请公布日期 |
2012.04.05 |
申请号 |
US201113325199 |
申请日期 |
2011.12.14 |
申请人 |
YU VINCENT;WANG HSIEN-CHENG;HSIEH HUNG-CHANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,("TSMC") |
发明人 |
YU VINCENT;WANG HSIEN-CHENG;HSIEH HUNG-CHANG |
分类号 |
H01L21/02;G03B27/72;G03F7/20;G03F7/22 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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