发明名称 PHOTOLITHOGRAPHY PROCESS FOR SEMICONDUCTOR DEVICE
摘要 Provided is a non-transitory computer readable medium including instructions to generate a level sensor map and create a compensation map from the level sensor map. The level sensor map includes a first determination of a first height above a reference plane of a feature disposed on a semiconductor substrate, and a second determination of a second height above the reference plane of a second feature disposed on a semiconductor substrate. The first and second feature are in a single exposure field. The compensation map includes a determination of at least one parameter to be used during exposure of a single field during an exposure process for the semiconductor substrate.
申请公布号 US2012082940(A1) 申请公布日期 2012.04.05
申请号 US201113325199 申请日期 2011.12.14
申请人 YU VINCENT;WANG HSIEN-CHENG;HSIEH HUNG-CHANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,("TSMC") 发明人 YU VINCENT;WANG HSIEN-CHENG;HSIEH HUNG-CHANG
分类号 H01L21/02;G03B27/72;G03F7/20;G03F7/22 主分类号 H01L21/02
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