| 发明名称 |
METHOD OF FORMING A BI-DIRECTIONAL TRANSISTOR WITH BY-PASS PATH |
| 摘要 |
In one embodiment, a transistor is formed to have a first current flow path to selectively conduct current in both directions through the transistor and to have a second current flow path to selectively conduct current in one direction.
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| 申请公布号 |
US2012083075(A1) |
申请公布日期 |
2012.04.05 |
| 申请号 |
US201113324682 |
申请日期 |
2011.12.13 |
| 申请人 |
ROBB FRANCINE Y.;ROBB STEPHEN P. |
发明人 |
ROBB FRANCINE Y.;ROBB STEPHEN P. |
| 分类号 |
H01L21/332 |
主分类号 |
H01L21/332 |
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