发明名称 MICROMECHANICAL SUBSTRATE FOR A DIAPHRAGM WITH A DIFFUSION BARRIER LAYER
摘要 The invention specifies a micromechanical substrate which has at least two separate single-crystal silicon layers and which has a diaphragm in a partial region, wherein the thickness of the diaphragm is less than 20 µm and wherein the diaphragm comprises part of a first of the single-crystal silicon layers, furthermore having a heating element, which is configured to generate a temperature of more than 650°C in at least part of the diaphragm, and also having at least one diffusion barrier layer for reducing the oxidation of the first single-crystal silicon layer.
申请公布号 WO2012041539(A1) 申请公布日期 2012.04.05
申请号 WO2011EP58325 申请日期 2011.05.23
申请人 SIEMENS AKTIENGESELLSCHAFT;FLEISCHER, MAXIMILIAN;HEDLER, HARRY;WIESNER, KERSTIN;ZAPF, JOERG;FREUDENBERG, OLIVER;SCHIEBER, MARKUS;SCHREINER, MANFRED;WEIDNER, KARL 发明人 FLEISCHER, MAXIMILIAN;HEDLER, HARRY;WIESNER, KERSTIN;ZAPF, JOERG;FREUDENBERG, OLIVER;SCHIEBER, MARKUS;SCHREINER, MANFRED;WEIDNER, KARL
分类号 B81B3/00;G01N27/12;G01N27/14 主分类号 B81B3/00
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