| 摘要 |
A static random access memory (SRAM) includes an SRAM cell to store a bit of data. A word line accesses the SRAM cell, which, responsively, during a read, drives either a bit line true (BLT) or a bit line complement (BLC) low. Both BLT and BLC are precharged to a supply voltage, then, subsequently are discharged to a reference voltage, lower than the supply voltage, prior to the word line being activated. Because the bit lines are at a voltage lower than the supply voltage when the SRAM cell is activated, the SRAM cell stability is improved. |
