III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND PROCESS FOR MANUFACTURING SAME

摘要

Provided are: a III nitride semiconductor light-emitting element, in which both good ohmic contact between an electrode and a semiconductor layer and performing of the function of an reflecting electrode layer can be achieved satisfactorily at the same time and the luminous efficiency can be improved without increasing a forward voltage so much; and a process for manufacturing the III nitride semiconductor light-emitting element. This III nitride semiconductor light-emitting element (100) comprises: a III nitride semiconductor laminate (106) composed of an n-type semiconductor layer (103), a light-emitting layer (104) and a p-type semiconductor layer (105); an n-side electrode (112); and a p-side electrode (113). The III nitride semiconductor light-emitting element (100) is characterized in that a mixed layer (111) which is composed of a reflecting electrode section (109) and a contact section (110) comprising AlxGa1-xN (0 = x = 0.05) is provided on a second surface (108) of the III nitride semiconductor laminate (106), wherein the second surface (108) is opposed to a first surface (107) that corresponds to the light-extracting side of the III nitride semiconductor laminate (106).