| 摘要 |
<p>In order to provide a semiconductor device the current or withstanding voltage of which is higher than conventional power MOSFETs, and the switching speed of which is faster than IGBTs, in accordance with the purpose of use thereof, the semiconductor device, which comprises an n-type drift layer region (1), a second electrode (3) and a gate electrode (7) formed on a main face thereof, and an n-type buffer region (4) and a first electrode (11) formed on the other main face thereof, has a plurality of p-type drain regions (5) formed on the surface of the n-type buffer region (4). Since portions where the p-type drain regions (5) come in contact with the first electrode (11) function as IGBTs, and portions where the n-type buffer region (4) come in contact with the first electrode (11) function as power MOSFETs, the desired characteristic can be attained by changing the configuration of the p-type drain regions (5).</p> |
